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CYStech Electronics Corp.
P-CHANNEL Enhancement Mode MOSFET
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 1/8
MTP2303N3
Description
The MTP2303N3 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
Features
* VDS=-30V RDS(ON)=240m@VGS=-10V, IDS=-1.7A * Advanced trench process technology * Super high dense cell design for extremely low on resistance * Reliable and rugged * Compact and low profile SOT-23 package * Pb-free package
Applications
* Power management in Notebook Computer * Portable equipment * Battery powered system
Equivalent Circuit
MTP2303N3
Outline
SOT-23 D
GGate SSource DDrain
G
S
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25C)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @TA=25C (Note 1) Continuous Drain Current @TA=70C (Note 1) Pulsed Drain Current (Note 2) Maximum Power Dissipation (Note 3) Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID ID IDM PD Tj, Tstg
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 2/8
Limits -30 20 -1.9 -1.5 -10 1.38 0.01 -55~+150
Unit V V A A A W W/C C
Note : 1. Pulse Test : Pulse Width 300s, Duty Cycle2% 2. Pulse width limited by maximum junction temperature. 3. Surface mounted on 1 in copper pad of FR-4 board, 270C/W when mounted on minimum copper pad.
Thermal Performance
Parameter Thermal Resistance, Junction-to-Ambient Symbol Rth,ja Limit 90 Unit C/W
Note : Surface mounted on 1 in copper pad of FR-4 board, 270C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol Static BVDSS BVDSS/Tj VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic Ciss Coss Crss *td(ON) *tr *td(OFF) *tf *Qg *Qgs *Qgd
MTP2303N3
Min. -30 -1.0 -
Typ. -0.1 2 230 130.4 40 7.6 8.2 17.5 9 6.2 1.4 0.3
Max. 100 -1 -10 240 460 -
Unit V V/C V nA A A m S
Test Conditions VGS=0, ID=-250A Reference to 25C , ID=-1mA VDS=VGS, ID=-250A VGS=20V, VDS=0 VDS=-30V, VGS=0 VDS=-30V, VGS=0, Tj=70C ID=-1.7A, VGS=-10V ID=-1.3A, VGS=-4.5V VDS=-10V, ID=-1.7A
pF
VDS=-15V, VGS=0, f=1MHz VDS=-15V, ID=-1A, VGS=-10V, RG=6, RD=15 VDS=-15V, ID=-1.7A, VGS=-10V
CYStek Product Specification
ns
nC
CYStech Electronics Corp.
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 3/8
Electrical Characteristics (Tj=25C, unless otherwise specified) ---Cont.
Source-Drain Diode *VSD *ISD *ISM -1.2 -1 -10 V A A VGS=0V, ISD=-1.25A, Tj=25C VD=VG=0, VS=-1.2V
*Pulse Test : Pulse Width 300s, Duty Cycle2%
Ordering Information
Device MTP2303N3 Package SOT-23 (Pb-free) Shipping 3000 pcs / Tape & Reel Marking 2303
Moisture Sensitivity Level : conform to JEDEC level 3
Recommended Storage Condition: Temperature : 10~ 35 C Humidity : 30~ 60% RH
Characteristic Curves
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 4/8
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves(Cont.)
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 5/8
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Reel Dimension
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 6/8
Carrier Tape Dimension
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product Pb-free devices Peak Temperature 260 +0/-5 C
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 7/8
Soldering Time 5 +1/-1 seconds
Recommended temperature profile for IR reflow
Note : All temperatures refer to topside of the package, measured on the package body surface.
Profile feature Average ramp-up rate (Tsmax to Tp) Preheat -Temperature Min(TS min) -Temperature Max(TS max) -Time(ts min to ts max) Time maintained above: -Temperature (TL) - Time (tL) Peak Temperature(TP) Time within 5C of actual peak temperature(tp) Ramp down rate Time 25 C to peak temperature
Sn-Pb eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds 240 +0/-5 C 10-30 seconds 6C/second max. 6 minutes max.
Pb-free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds 260 +0/-5 C 20-40 seconds 6C/second max. 8 minutes max.
MTP2303N3
CYStek Product Specification
CYStech Electronics Corp.
SOT-23 Dimension
Spec. No. : C426N3 Issued Date : 2008.03.24 Revised Date : Page No. : 8/8
A L 3 B 1 2 S
Marking:
TE 2303
V
G
3-Lead SOT-23 Plastic Surface Mounted Package CYStek Package Code: N3 Style: Pin 1.Gate 2.Source 3.Drain
C D K
H
J
*: Typical
DIM A B C D G H
Inches Min. Max. 0.1102 0.1204 0.0472 0.0630 0.0335 0.0512 0.0118 0.0197 0.0669 0.0910 0.0005 0.0040
Millimeters Min. Max. 2.80 3.04 1.20 1.60 0.89 1.30 0.30 0.50 1.70 2.30 0.013 0.10
DIM J K L S V
Inches Min. Max. 0.0034 0.0070 0.0128 0.0266 0.0335 0.0453 0.0830 0.1083 0.0098 0.0256
Millimeters Min. Max. 0.085 0.177 0.32 0.67 0.85 1.15 2.10 2.75 0.25 0.65
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTP2303N3
CYStek Product Specification

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